METHOD OF ETCHING PORES IN IRRADIATED POLYMERIC MATERIALS Russian patent published in 2006 - IPC B01D67/00 

FIELD: polymer materials and electronics.

SUBSTANCE: invention relates to ion-tracking technology used in manufacture of flexible circuit boards for wide-destination electronic systems as well as for manufacturing film materials with different-configuration micropores. Method of invention comprises irradiation of material surface with accelerated heavy element ions and etching activated tracks in solution of suitable reagent. During etching operation, irradiated material is first stretched in inclined plane at a small angle to horizon and surface of material to be etched is flooded with layer of cold etching solution, temperature of which is at least by 10°C lower than that of material to be etched, while the material is heated from below to temperature within a range between 30 and 200°C to promote chemical destruction reaction at a rate exceeding rate of etching of the surface being cooled with fresh portions of etching solution. After etching, material is rinsed with water and cooled.

EFFECT: accelerated etching and increased its selectivity.

2 dwg