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2 287 028

(13)

(51)

IPC

C30B25/02(2006-01-01)

C30B25/20(2006-01-01)

C30B29/04(2006-01-01)

C23C16/27(2006-01-01)

C30B33/12(2006-01-01)

A44C17/00(2006-01-01)

(21) (22)

Application

2002135628/15, 2001-06-14

(24)

Start date

2001-06-14

(22)

Actual filing date

2001-06-14

(45)

Published

2006-11-10

(72)

Inventor

Skarsbruk Dzheffri AlanMartino Filip MorisDorn Behrbel' Zuzanna SharlottaKuper Ehndr'Ju MajklKollins Dzhon LlojdUajtkhed Ehndr'Ju DzhonTuitchen Daniel' DzhejmsSussmann Rikardo Sajmon

(73)

Holder

Ehlement Siks Ltd.

MONOCRYSTAL DIAMOND LAYER OF HIGH THICKNESS, METHOD OF PRODUCTION OF SUCH LAYER AND PRECIOUS STONES MADE FROM THIS LAYER Russian patent published in 2006 - IPC C30B25/02 C30B25/20 C30B29/04 C23C16/27 C30B33/12 A44C17/00

Abstract RU 2287028 C2

FIELD: production of diamond layers.

SUBSTANCE: diamond layer at thickness more than 2 mm is obtained through chemical deposition from gaseous phase. Method includes homo-epitaxial growth of diamond layer on surface of backing at low level of defects in atmosphere containing nitrogen at concentration lesser than 300 billion parts of nitrogen.

EFFECT: improved quality of diamond layers.

36 cl, 10 dwg, 1 tbl, 4 ex

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RU 2 287 028 C2

Authors

Skarsbruk Dzheffri Alan

Martino Filip Moris

Dorn Behrbel' Zuzanna Sharlotta

Kuper Ehndr'Ju Majkl

Kollins Dzhon Llojd

Uajtkhed Ehndr'Ju Dzhon

Tuitchen Daniel' Dzhejms

Sussmann Rikardo Sajmon

Dates

2006-11-10—Published

2001-06-14—Filed