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(19)

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2 288 302

(13)

(51)

IPC

C30B25/02(2006-01-01)

C30B29/04(2006-01-01)

C23C16/27(2006-01-01)

C30B33/12(2006-01-01)

G01T1/202(2006-01-01)

H01L29/00(2006-01-01)

(21) (22)

Application

2002135637/15, 2001-06-14

(24)

Start date

2001-06-14

(22)

Actual filing date

2001-06-14

(45)

Published

2006-11-27

(72)

Inventor

Skarsbruk Dzheffri AlanMartino Filip MorisKollins Dzhon LlojdSussmann Rikardo SajmonDorn Behrbel' Zuzanna SharlottaUajtkhed Ehndr'Ju DzhonTuitchen Daniel' Dzhejms

(73)

Holder

Ehlement Siks Ltd.

MONO-CRYSTAL DIAMOND PRODUCED BY CHEMICAL DEPOSITION METHOD FROM GAS PHASE AND METHOD OF PRODUCTION OF SUCH DIAMOND Russian patent published in 2006 - IPC C30B25/02 C30B29/04 C23C16/27 C30B33/12 G01T1/202 H01L29/00

Abstract RU 2288302 C2

FIELD: production of diamonds for electronics.

SUBSTANCE: diamond is produced from gas phase by chemical deposition on diamond substrate whose surface is practically free from any defects in crystal lattice in flow of carrier gas in atmosphere containing nitrogen at concentration lesser than 300 part/10⁹. Diamond thus produced is chemically pure with no defects in crystal lattice at enhanced electronic characteristics as compared with purest natural diamonds.

EFFECT: enhanced purity and improved electronic characteristics.

32 cl, 8 dwg, 1 tbl, 4 ex

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RU 2 288 302 C2

Authors

Skarsbruk Dzheffri Alan

Martino Filip Moris

Kollins Dzhon Llojd

Sussmann Rikardo Sajmon

Dorn Behrbel' Zuzanna Sharlotta

Uajtkhed Ehndr'Ju Dzhon

Tuitchen Daniel' Dzhejms

Dates

2006-11-27—Published

2001-06-14—Filed