DEVICE FOR CRYSTAL GROWTH BY VERTICAL BRIDGMAN METHOD Russian patent published in 2019 - IPC C30B11/00 C30B29/08 

FIELD: technological processes.

SUBSTANCE: invention relates to the technology of growing monocrystals of semiconductors using a vertical Bridgman method. Device comprises housing 1 with heat insulation 2 arranged inside, two in-series installed heater 3, 5 and crucible 6 with working chamber, having the possibility of axial movement, wherein the device further comprises third – middle heater 4 with height hc, installed in the gap between heat insulation 2 and heaters 3, 5, having identical inner di and external de diameters, symmetrically to the contact plane of lower 5 and upper 3 heaters, wherein total height hul of upper 3 and lower 5 heaters is 1.5H–2H, inner diameter di is 1.1D–1.2D, external diameter de is 1.4D-1.5D, and height of third heater is 0.25H–0.5H, its inner diameter Di is 1.55D–1.65D, and external diameter De is 1.85D–1.95D, where H is crucible working chamber height, and D is crucible outer diameter.

EFFECT: invention enables to obtain crystals of high quality by providing a uniform and controlled temperature field in the area of contact of heaters.

1 cl, 1 dwg, 1 ex