METHOD FOR CHALCOGEN TREATMENT OF n-TYPE GALLIUM ARSENIDE SURFACE Russian patent published in 2007 - IPC H01L21/306 

FIELD: semiconductor electrochemistry and semiconductor device technology.

SUBSTANCE: in addition to standard technology, n-type gallium arsenide semiconductor electrode surface is given chemical treatment in solutions of chalcogen-containing compounds prior to electrochemical evaporation of metal on this surface. Specimen is sequentially held at first for 3 minutes in 0.05 M aqueous solution of sodium sulfate (Na₂S), then it is dipped for 1-2 seconds in warm (45-50 °C) distilled water, whereupon it is immersed for 3-4 minutes in 0.1 M aqueous solution of sodium selenite (Na₂SeO₃) and washed for 30 seconds in two portions of hot (60-70 °C) distilled water. In this way nanometric junction layer of arsenide and gallium chalcogenides is formed at metal-semiconductor interface which is coherently integrated with semiconductor and metal phases.

EFFECT: enhanced stability of electrophysical characteristics of metal-semiconductor rectifying contacts at high temperatures in oxidizing atmosphere.

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