FIELD: physics, conductors.
SUBSTANCE: invention is related to the field of semiconductor technology and may be used to realise electronic and chemical immunisation of semiconductor compound GaSb surface and devices on its basis. Method for production of nitride film on surface GaSb is realised by removal of oxides from GaSb surface and its further nitridation by immersion of GaSb surface into alkaline aqueous solution of hydrazine N2H4 with concentration of 10-20 mole/l, acid salt of hydrazine with concentration of 6-9 mole/l and water-soluble monosulfide with concentration of 0.02-0.04 mole/l.
EFFECT: production of monolayer nitride film, which is coherent to initial GaSb surface with preservation of GaSb surface planarity.
6 cl, 6 dwg, 2 tbl
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| METHOD OF MAKING NITRIDE FILM ON SURFACE OF GaSb BASED HETEROSTRUCTURE | 2008 |
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