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2 402 103

(13)

(51)

IPC

H01L21/316(2006-01-01)

(21) (22)

Application

2009133993/28, 2009-09-10

(24)

Start date

2009-09-10

(22)

Actual filing date

2009-09-10

(45)

Published

2010-10-20

(72)

Inventor

Erofeev Evgenij ViktorovichIshutkin Sergej VladimirovichKagadej Valerij AlekseevichNosaeva Ksenija Sergeevna

(73)

Holder

Zakrytoe Aktsionernoe Obshchestvo Firma Mikran"

GaAs SURFACE PASSIVATION METHOD Russian patent published in 2010 - IPC H01L21/316

Abstract RU 2402103 C1

FIELD: physics.

SUBSTANCE: method of passivating a GaAs surface involves chemical cleaning of the surface of a GaAs surface, oxidation in a solution of hydrogen peroxide H₂O₂ for 1-10 minutes, chalcogenisation in a (NH₄)₂S solution and removal of solution residue. After chemical cleaning of the surface of the GaAs plate and its oxidation, it is preferred to route manufacturing of the semiconductor device and carry out chalcogenisation of the GaAs directly before depositing thin metal films or a thin dielectric film.

EFFECT: invention improves electrical parametres of the metal-semiconductor and dielectric-semiconductor boundary surface formed on a GaAs passivated surface.

4 cl, 2 dwg

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RU 2 402 103 C1

Authors

Erofeev Evgenij Viktorovich

Ishutkin Sergej Vladimirovich

Kagadej Valerij Alekseevich

Nosaeva Ksenija Sergeevna

Dates

2010-10-20—Published

2009-09-10—Filed