METHOD OF MANUFACTURING RECTIFYING CONTACTS TO GALLIUM ARSENIDE BY ELECTROCHEMICAL DEPOSITION OF RUTHENIUM Russian patent published in 2018 - IPC H01L21/288 

FIELD: electrical engineering.

SUBSTANCE: invention relates to semiconductor microelectronics, in particular to fabrication of contacts with a Schottky barrier to gallium arsenide by electrochemical deposition of ruthenium. Method for manufacturing rectifying contacts for gallium arsenide includes: local metallization of the n-GaAs surface by the electrochemical deposition of ruthenium from a ruthenium sulfamate electrolyte based on ruthenium hydroxychloride, containing (g/l): Ru(OH)Cl₃ (as metal) – 2.5–5, NH₂SO₃H – 25–50, at a temperature of 20–65 °C, cathode current density of 1.0–5.0 A/dm², without or with the imposition of an ultrasonic field. Subsequent annealing of ruthenium contacts is carried out at a temperature of 400 °C in hydrogen atmosphere for 10 minutes. Method makes it possible to obtain qualitative rectifying ruthenium contacts to gallium arsenide Ru/n-GaAs, including small ones, with electrophysical characteristics close to ideal, having high thermal stability (up to 500 °C).

EFFECT: invention also simplifies the process.

3 cl, 2 tbl, 1 dwg