METHOD FOR PRODUCING NITRIDE FILM ON SURFACES OF SEMICONDUCTOR COMPOUNDS Russian patent published in 2001 - IPC

FIELD: semiconductor engineering. SUBSTANCE: method used for passivating surfaces of semiconductor compounds A³B⁵ and devices built around them and for treating surfaces to be subjected to epitaxial growth of GaN involves removal of oxides from semiconductor surface followed by its neutralization in environment containing hydrazine N₂H₄. Novelty is that oxide removal and neutralization are effected by dipping semiconductor surface in aqueous alkali solution of hydrazine N₂H₄ and water-soluble monosulfide. Concentration of hydrazine in mentioned solution is 2-10 mole/l and that of sulfide salt of group 1 metal is 0.05-015 mole/l. Sulfide salt of group 1 metal (such as Na₂S) or (NH₄)₂S may be introduced as soluble monosulfide. Single-layer films coherent to original semiconductor surface to minimize density of surface states in forbidden gap may be produced by using this method. EFFECT: provision for obtaining crystalline surface. 4 cl, 1 tbl