METHOD FOR SELENATE-THIOSULPHATE PROCESSING OF n-TYPE GALLIUM ARSENIDE SURFACE Russian patent published in 2016 - IPC H01L21/306 

FIELD: chemistry.

SUBSTANCE: surface of semi-conductor electrode - n-type gallium arsenide - is subjected to additional to standard chemical one processing in solutions of chacogen-containing compounds with further surface washing in boiled distilled water. Peculiarity, which differs said method from earlier known methods for preliminary chalcogen processing of gallium arsenide surface consists in the fact that semiconductor electrode is successively kept for 3 minutes in 0.1 M water solution of selenic acid, submerged into warm distilled water with temperature 40°C, kept for 3 minutes in 0.1 M water solution of sodium thiosulphate and washed in two portions of boiled distilled water with temperature 60-70°C. This is followed by operation of electric precipitation of metals from water solutions on gallium arsenide.

EFFECT: invention is applied in microelectronics in creation of rectifying contacts before electrochemical application of metal on semiconductor and provides increase of stability of electrophysical characteristics of rectifying contacts metal-semiconductor under impact of higher temperatures in oxidative atmosphere.

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