METHOD OF PRODUCING THROUGH MICROHOLES IN A SILICON SUBSTRATE Russian patent published in 2019 - IPC H01L21/302 

FIELD: microelectronics.

SUBSTANCE: invention relates to the field of microelectronics technology and can be used in making 3D devices of microsystem equipment, for example micro injectors, micromotors, and namely when obtaining through microholes in a silicon substrate. Method of producing through microholes in a silicon substrate involves forming on the substrate surface an aluminum mask for etching by photolithography, formation of "stop-layer" on the back side of the substrate based on the solid polyimide coating from the solution of polyamide acid based on dianhydride and oxydianiline in a polar solvent with subsequent drying and imidisation, carrying out "dry" etching through the aluminum mask in the Bosch process, removing the mask and "stop-layer", note here that, before formation of polyimide coating on reverse side, formation of continuous optically transparent metal coating is performed.

EFFECT: providing vertical walls of microhole walls along their entire length.

6 cl, 4 dwg