METHOD AND APPARATUS FOR PRODUCING THREE-DIMENSIONAL MONOCRYSTALLINE GALLIUM-CONTAINING NITRIDE (VARIANTS) Russian patent published in 2007 - IPC C30B7/10 C30B29/38 

FIELD: production of crystal of gallium containing nitride by means of ammonia method.

SUBSTANCE: according to one variant of invention gallium containing nitride crystal is received by crystallizing initial gallium-containing material at least on one nucleus of crystallization at presence of alkali metal containing component in nitrogen-containing dissolving agent being in super critical state. In second variant of invention three-dimensional mono-crystalline gallium-containing nitride is produced in autoclave. Method according to second variant comprises steps of creating supercritical ammonia solution containing ions of alkali metal and gallium in dissolved state by adding gallium-containing initial material to supercritical ammonia solution including ions of alkali metals (in such supercritical ammonia solution gallium-containing nitride solubility features negative temperature coefficient); selectively crystallizing gallium-containing nitride on crystallization nucleus from said supercritical ammonia solution due to using negative temperature coefficient of solubility of gallium -containing nitride. Apparatus for performing the method includes autoclave with inner space having at least one unit for heating autoclave at least in two zones till different temperature values. In autoclave horizontal partition (partitions) divides its inner space by dissolving zone and crystallizing zone. Dissolving zone is arranged over horizontal partition (partitions). In order to provide optimal crystallization of nitride with use of negative temperature coefficient of its solubility, initial material is arranged in upper zone and crystallization nucleus is arranged in lower zone of autoclave.

EFFECT: possibility for producing crystals of mono-crystalline gallium-containing nitride of super-high quality.

103 cl, 16 dwg, 13 ex