FIELD: optical electronics and crystal growing.
SUBSTANCE: invention relates to three-dimensional nitride monocrystal, in particular the one destined for use as support for epitaxy suitable for use in optoelectronics to manufacture optoelectronic semiconductor nitride-based devices and, more particular, to manufacture semiconductor laser diodes and laser devices. Invention discloses three-dimensional nitride monocrystal, namely gallium nitride monocrystal having surface area of cross-section in the plane perpendicular to c-axis of hexagonal crystal lattice of gallium nitride monocrystal larger than 100 mm2, thickness more than 1.0 μm, and surface dislocation density in plane C less than 106/cm2, while its volume is great enough to obtain at least one plate appropriate for further treatment, plane A or plane M of the plate having surface area at least 100 mm2. In a more general case, invention iscloses three-dimensional nitride monocrystal, namely nitride monocrystal containing gallium, which has cross-section in the plane perpendicular to c-axis of hexagonal crystal lattice of gallium-containing nitride with surface area larger than 100 mm2, thickness more than 1.0 μm, and surface dislocation density in plane C less than 106/cm2. These three-dimensional gallium-containing nitride monocrystals are crystallized using a method comprising dissolution of initial gallium-containing material in overcritical solvent and crystallization of gallium nitride on the surface of seed crystal at temperature higher and/or at pressure lower than those utilized in dissolution process.
EFFECT: improved quality of monocrystals due to reduced dislocation density.
48 cl, 20 dwg, 26 ex
