FIELD: epitaxial growth of thin films from gas phase.
SUBSTANCE: proposed method for producing thin cadmium-telluride films includes following procedures: cadmium-telluride source is disposed in bottom part of vertically mounted reactor of "hot wall" type and cadmium-mercury telluride substrate is placed at distance of minimum 10 reactor diameters above this source; reactor is connected to 10-3 Pa vacuum exhaust system so that source temperature amounts to 500 °C; temperature in area between source and substrate at distance of minimum 10 reactor diameters is 550-600 °C; condensing region and substrate temperature is maintained between 250 and 300 °C; distance between condensing region boundary and substrate is maintained at level not over free path length of gas phase molecules at condensation temperature.
EFFECT: ability of producing thin cadmium telluride films on cadmium-mercury telluride surface in hot-wall reactor.
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