METHOD OF DEPOSITING THIN STOICHIOMETRIC FILMS OF BINARY COMPOUNDS Russian patent published in 2008 - IPC C23C16/44 H01L21/205 

FIELD: nanotechnology.

SUBSTANCE: present invention pertains to semiconductor nanotechnology, in particular, to thin-film material science, and can be used in modern technology, especially the fast growing technology of integral circuits. To deposit thin stoichiometric films of binary CdTe compound, the following technological operations are carried out. Successive processing of the substrate surface is carried out at 210-390°C using vapours of cation- and anion containing reagents-precursors of dimethylcadmium and methallyl telluride mixed with a gas carrier. Intermediate removal of tellurium from the surface of the substrate is carried out, which is in excess after formation of the stoichiometric CdTe compound. Removal is done by treatment with a reagent-precursor, which forms a volatile compound with the tellurium.

EFFECT: obtaining high quality thin stoichiometric films of binary CdTe compound are obtained without geometrical and chemical defects.

4 cl, 9 dwg