FIELD: technological processes.
SUBSTANCE: invention relates to the formation of the base layers of thin-film photoelectric converters (PhEC) based on CdTe. Method of manufacturing in a quasi-closed volume of the base layers of flexible photoelectric converters based on CdTe, in which the distance from the evaporation zone of cadmium telluride to its condensation zone is comparable with the diameter of the reactor. Design of the used quasi-closed volume ensures that the evaporation surface area in the source exceeds the substrate area and minimizes leakage of steam into the external volume at a level of 5 wt. %.
EFFECT: this allows to realize deposition conditions on flexible polyimide substrates, which are close to thermodynamically equilibrium, and to obtain cadmium telluride films of stable cubic modification at evaporator temperature of 425–460 °C and substrate temperature of 319–353 °C.
4 cl, 1 dwg, 1 ex
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