FIELD: micro-electronic engineering, in particular, technology for manufacturing multi-element MIS-devices on semiconductor cadmium-mercury-telluride.
SUBSTANCE: method includes forming of anodic oxide on the surface of semiconductor substrate and following application in vacuum chamber of a layer of zinc sulfide. Layer of zinc sulfide is applied cyclically at temperature of substrate 10-60°, pressure of fumes of diethyl-zinc and hydrogen sulfide in vacuum chamber not less than 5 mm on meter of mercury, and exposure not less than 0,1 sec.
EFFECT: increased stability of structural characteristics.
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