FIELD: physics.
SUBSTANCE: present invention pertains to the technology of making an array of photosensitive elements with p-n-junctions infrared band micro-photoelectronics. The method of making an array of photodiode elements with n+-p-junctions based on cadmium-mercury telluride involves surface passivation by epitaxy of cadmium telluride dielectric, photolithography, chemical etching of n+-p-junction locations by 2-3 mcm inside the cadmium-mercury telluride and ion implantation or iron bombardment in plasma.
EFFECT: proposed method allows for obtaining photodiodes with small dark current value and high quantum efficiency, providing for high detection capacity.
4 dwg
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