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2 298 271

(13)

(51)

IPC

H01S3/02(2006-01-01)

H01S3/09(2006-01-01)

H01S3/97(2006-01-01)

(21) (22)

Application

2004109144/28, 2002-08-19

(24)

Start date

2002-08-19

(22)

Actual filing date

2002-08-19

(45)

Published

2007-04-27

(72)

Inventor

Noules Dehvid S.Braun Dehniel Dzh. V.Sehndstrom Richard L.Rilov German E.Onkel'S Ehkkekhard D.Bezosel' Ehrve A.Majers Dehvid V.Ershov Aleksandr I.Partlo Vill'Jam N.Fomenkov Igor' V.Uzhazdovski Richard K.Ness Richard M.Smit Skott T.Khalberd Vill'Jam Dzh.

(73)

Holder

Sajmer, Ink.

LINE-SELECTABLE DOUBLE-CHAMBER F LASER SYSTEM Russian patent published in 2007 - IPC H01S3/02 H01S3/09 H01S3/97

Abstract RU 2298271 C2

FIELD: laser engineering; narrow-band double-discharge gas lasers used as light sources for integrated-circuit lithography.

SUBSTANCE: two separate gas-discharge chambers are provided of which one chamber is part of master oscillator producing extremely narrow-band seed beam amplified in other discharge chamber. Each chamber can be separately controlled and has one tangential blower affording sufficient gas flow enabling operation at pulse repetition frequency of 4000 pulses per second or more due to removal of discharge products from discharge area within pulse-to-pulse time interval shorter than approximately 0.25 milliseconds. Master oscillator is provided with line choice unit enabling selection of most intensive spectral line F₂.

EFFECT: improved design and ability of regulating beam parameters, including pulse wavelength and energy.

154 cl, 74 dwg

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RU 2 298 271 C2

Authors

Noules Dehvid S.

Braun Dehniel Dzh. V.

Sehndstrom Richard L.

Rilov German E.

Onkel'S Ehkkekhard D.

Bezosel' Ehrve A.

Majers Dehvid V.

Ershov Aleksandr I.

Partlo Vill'Jam N.

Fomenkov Igor' V.

Uzhazdovski Richard K.

Ness Richard M.

Smit Skott T.

Khalberd Vill'Jam Dzh.

Dates

2007-04-27—Published

2002-08-19—Filed