FIELD: controlled high-power cold-cathode gas-discharge devices or pseudo-spark switching units.
SUBSTANCE: proposed controlled gas-discharge device has anode and hollow cathode isolated from anode by discharge gap; cathode base faces anode and has holes providing communication between main discharge gap and starting electrode that accommodates semiconductor igniter and is disposed within cathode space. Igniter is made of semiconductor based polycrystalline material and its forbidden gap width does not exceed 1.5 eV. Device has minimum two contact electrodes contacting the igniter; at least one contacting electrode is connected to starting electrode and other one is insulated from starting electrode and connected to cathode; maximal width of contact electrode in sectional area crossing point of igniter contact does not exceed mean roughness pitch on igniter surface by more than 100 times.
EFFECT: enhanced speed of switching heavy-current high-voltage circuits of various pulse-operated devices.
9 cl, 6 dwg
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Authors
Dates
2007-05-27—Published
2005-06-02—Filed