COMMUTE STRUCTURE DEVICE Russian patent published in 2017 - IPC H01J17/44 H01T2/02 

FIELD: electricity.

SUBSTANCE: field of application of the invention is electronic and plasma technology, in particular powerful controlled and uncontrolled devices, including vacuum and gas-filled arresters, thyratrons of various types, "pseudo-spark" switches, arc chutes, plasma accelerators and switches, thermonuclear colliders and other devices designed for switching, or transport of plasma in the pulsed and continuous mode in high-current high-voltage circuits of various electric power and radio engineering devices. In a commutating high-current device, containing in an enclosure from an external environment the volume into which the plasma of a high-current arc is injected, moving under the influence of external forces, with a screen of conductive material, surrounding the drift space of the plasma is symmetrical to the axis of the device, the screen has a thickness that is more than 2-3 times the size of the skin layer in the screen material at the value of the minimum component of the pulse frequency of the switched current, or is made up of at least two parts - internal and external, closed at the ends, with a distance between them, more than the thickness of the skin layer.

EFFECT: increased reliability of switched charge and current, spatial stability of the plasma channel with a high service life.

6 cl, 12 dwg