FIELD: electricity.
SUBSTANCE: in high-voltage electronic device containing high-voltage electrodes arranged in dielectric cover, on inner surface of cover in areas with high field intensity there is coating from composite material and polycrystalline material with volume conductivity of particles of 10-9 to 10-13 Ohm-1 cm-1 is used as its base; each of particles includes on its surface a nanolayer of binding nonorganic material; high-voltage electrodes are arranged in vacuum cover and fixed on insulators. Surface of dielectric cover, which is in vacuum, is covered with layer of material consisting of chrome, boron or zirconium oxides in the form of polycrystalline porous mass with particle sizes of 30 nm - 30 mcm, which are bound to each other with nonorganic material, for example silicon oxide (SiO2) with layer thickness of not more than 100 nm. Coating has thickness which is not less than 0.2 of length of free path of electrons in coating material at maximum value of working voltage of the device. Coefficient of secondary electron emission of the main coating material has value of not more than 1.5. High-voltage electrodes have modified surface having extra-fine crystalline or amorphous structure up to 30 mcm deep, for example by means of their processing with heavy-current pulse electron or ion beam. Device is placed into tight vessel filled with the medium with electric strength which is higher than air at atmospheric pressure, for example with transformer oil subject to cleaning and pumping in vacuum, or with sulphur hexafluoride (SF6). Vessel is filled with the above media under pressure higher than atmospheric.
EFFECT: increasing electric strength of devices, reducing their overall dimensions and weight.
7 cl, 3 dwg
Title | Year | Author | Number |
---|---|---|---|
X-RAY TUBE | 0 |
|
SU764005A1 |
SPARK DISCHARGER | 2015 |
|
RU2608825C2 |
CONTROLLED GAS-DISCHARGE DEVICE | 2005 |
|
RU2300157C1 |
COMMUTE STRUCTURE DEVICE | 2016 |
|
RU2638954C2 |
GASOUS-DISCHARGE DEVICE WITH COLD CATHODE | 1995 |
|
RU2089003C1 |
HIGH-VOLTAGE VACUUM SWITCH | 2005 |
|
RU2286614C1 |
GAS-DISCHARGE DEVICE | 2012 |
|
RU2519591C2 |
METHOD OF MAKING SELF-ALIGNED HIGH-VOLTAGE INTEGRATED TRANSISTOR | 2012 |
|
RU2492546C1 |
EMISSION LIGHT-EMITTING DIODE CELL | 2014 |
|
RU2562907C1 |
STRUCTURE OF CRYSTAL OF HIGH-VOLTAGE SEMICONDUCTOR DEVICE, HIGH-VOLTAGE INTEGRATED MICROCIRCUIT (VARIANTS) | 2016 |
|
RU2650814C1 |
Authors
Dates
2011-05-10—Published
2010-01-28—Filed