SCHOTTKY-BARRIER PHOTODETECTOR MATRIX SENSITIVE IN SUB-MILLIMETER WAVEBAND Russian patent published in 2007 - IPC H01L27/14 

FIELD: astronomic, intruder-alarm, and military optoelectronic systems operating in distant infrared and sub-millimeter bands of spectrum.

SUBSTANCE: proposed matrix that can be used in multicomponent electromagnetic radiation receivers such as bivariate image-to-video signal converters has semiconductor substrate that mounts Schottky-barrier detectors, integrated circuit for taking-off and conveying signals from each detector to matrix output, and integrated signal amplifier-converters (quantity of the latter depends on that of outputs). Thickness of metal-conductor layer forming Schottky barrier in detector is equal to or greater than skin-layer in this material and potential barrier thickness exceeds quanta energy of radiation being recorded and crystal-lattice mean thermal energy; in addition, clarifying layer is formed in substrate-to-Schottky-barrier interface. Photodetector matrix of proposed design is characterized in desired sensitivity in distant infrared region of spectrum, including in sub-millimeter waveband, its detector-to-detector heat insulation needs not be intricate in design and manufacture.

EFFECT: enhanced resistance to temperature fluctuations and vibrations.

3 cl, 2 dwg