FIELD: physics.
SUBSTANCE: proposed method of magnified boundary wavelength of infrared detector is based on arrangement of physical conditions for direct recording of metal-to-semiconductor hot electron thermionic current generated in thick Shottky barrier quasimetal contact of reciprocal order absorption factor. For this purpose absorbed quantum energy transfer time to electron system and diffusion balancing time in layer electron system is considered to be obtained less than thermal equilibrium time between electron system and layer crystal lattice. Processing operations providing specified effect are offered. Besides, IR detector and photodetector array produced according to the specified method are offered.
EFFECT: magnified boundary wavelength and associated sensitivity enhancement within middle and long-range infrared spectrum.
8 cl, 2 dwg
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Authors
Dates
2008-10-10—Published
2006-10-23—Filed