MULTI-CELL INFRARED HOT-CARRIER DETECTOR WITH 1/5-eV CUT-OFF Russian patent published in 1996 - IPC

FIELD: production of semiconductor photodetecting modules, matrices. SUBSTANCE: the infrared detector rated at a wave band of 1.5 to 6 um has a layer of single-crystal high-resistance silicon, of which a layer of photoabsorption with a dope concentration of (7-9)•10¹⁷cm^-2 and a contact layer, 100 to 500 thick, with a dope concentration of (5-9)•10¹⁹ cm^-3 are made in the form of a mesa-structure. A similar high-doped thin contact layer is formed on the other surface single-crystal silicon. Resistive layers are made on the contact layers. EFFECT: improved design. 4 dwg, 1 tbl