MONOSILANE PREPARATION PROCESS Russian patent published in 2007 - IPC C01B33/04 

FIELD: organosilicon compounds technology.

SUBSTANCE: method of preparing monosilane, useful in production of "sun" silicon, comprises catalytic disproportionation of trichlorosilane to form monosilane, silicon tetrachloride, and chlorosilanes in countercurrent reactor with catalyst. Gradual condensation of disproportionation reaction products to separate gaseous monosilane is carried out while recycling formed condensate to evaporator through catalyst bed in reaction zone in reactor. Condensate is heated in evaporator to form chlorosilane vapors, which are then directed to reaction zone of reactor in countercurrent to descending condensate flow. Liquid product is withdrawn from evaporator and, after posttreatment, is used in manufacture of silicon dioxide. Monosilane is sent to rectification column to remove chlorosilane traces. Catalyst in countercurrent reactor is disposed in tubular elements. Starting trichlorosilane is preliminarily treated with liquid product stream leaving evaporator and liquid product is then passed to tubular space of countercurrent reactor and discharged from top of reactor.

EFFECT: enhanced process efficiency, including optimized disproportionation process temperature conditions, intensified main process, and improved quality of monosilane at minimum power and material expenses.

1 dwg