METHOD OF PRODUCING HIGH-PURITY MONOSILANE AND SILICON TETRACHLORIDE Russian patent published in 2012 - IPC C01B33/04 C01B33/107 

FIELD: chemistry.

SUBSTANCE: invention relates to the technology of inorganic compounds. The method of producing high-purity monosilane and silicon tetrachloride is carried out via two-step disproportioning of chlorosilanes on an anion-exchange resin. The fist step involves disproportionation of trichlorosilane which is first purified from silicon tetrachloride in a first fractionation column to obtain mainly dichlorosilane and silicon tetrachloride. Silicon tetrachloride is output as a commercial product from the bottom of the first fractionation column and dichlorosilane is separated from unreacted trichlorosilane and silicon tetrachloride in a second fractionation column. The second step involves disproportionation of dichlorosilane with separation of monosilane from chlorosilanes in a third fractionation column. Only distillate from the first fractionation column which does not contain silicon tetrachloride is fed into the first reactor. After extraction, the monosiliane is purified from low-boiling impurities in a stripping fractionation column. Purification from compounds whose boiling point is higher than that of monosilane but lower than that of monochlorosilane is carried out in a fifth fractionation column.

EFFECT: high degree of conversion of trichlorosilane and obtaining a product with not less than 99,99% content of basic substance.

2 cl, 1 dwg, 2 ex