METHOD AND SYSTEM FOR OBTAINING PURE SILICON Russian patent published in 2014 - IPC C01B33/29 C01B33/04 C01B33/107 

FIELD: chemistry.

SUBSTANCE: invention can be applied in chemical industry for obtaining highly clean silicon. Method includes the following stages: obtaining trichlorosilane, obtaining monosilane by disproportionation of trichlorinesilane and thermal decomposition of monosilane. To obtain trichlorinesilane silicon reacts with hydrogen chloride in the process of hydrochlorination. Reaction mixture, which contains trichlorinesilane, simultaneously obtained in the process of silicon tetrachloride conversion, which is formed as by-product and interacts with silicon and hydrogen. System includes industrial installation for obtaining trichlorinesilane, which includes at least reactor for hydrochlorination, reactor for conversion, assembled reservoir for trichlorinesilane-including reaction mixture, and separator; installation for obtaining monosilane, which includes at least reactor for disproportionation and separator; and installation for thermal decomposition of obtained monosilane, which includes at least reactor for monosilane decomposition. Installation for monosilane obtaining is connected with installation for trichlorinesilane obtaining by means of reverse pipeline.

EFFECT: invention makes it possible to optimise process of obtaining highly clean silicon with re-application and further recycling of by-products.

36 cl, 1 dwg