HIGH-DISPERSITY SILICON DIOXIDE POWDER PREPARATION METHOD Russian patent published in 2008 - IPC C01B33/18 

Abstract RU 2314254 C1

FIELD: chemical engineering.

SUBSTANCE: method of preparing high-dispersity silicon dioxide powder involves generation of gas plasma, introduction of silicon tetrachloride vapors and oxygen-containing gas into gas plasma flow, and subsequent oxidation with oxygen or oxygen-containing gas at 1000-2100°C and ratio of silicon tetrachloride and oxygen molar consumption s between 1.0 and 3.0.

EFFECT: improved quality of product.

3 cl, 1 dwg, 1 tbl

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RU 2 314 254 C1

Authors

Gorovoj Mikhail Alekseevich

Gorovoj Jurij Mikhajlovich

Kljamko Andrej Stanislavovich

Pranovich Aleksandr Aleksandrovich

Vlasenko Viktor Ivanovich

Korzhakov Vladimir Viktorovich

Dates

2008-01-10Published

2006-05-18Filed