FIELD: chemistry.
SUBSTANCE: present invention can be used in chemical industry for producing fine silicon dioxide powder. Oxygen plasma or oxygen-containing gas is generated in plasmatron 1, and fed into reactor 3. Oxidation of silicon tetrachloride by oxygen or oxygen-containing gas takes place at 1000÷2100 °C temperature with 1.0-3.0 molar ratio of consumption of silicon tetrachloride and oxygen. Liquid silicon tetrachloride is atomised using an atomiser 10, in line inside and in the direction of flow of plasma at 0.2÷2.0 MPa pressure, with aperture angle of the atomisation jet of 70÷170°.
EFFECT: the proposed invention allows for producing fine silicon dioxide powder with particle size not less than 30 nm, with uniform particle size distribution.
1 dwg, 2 tbl
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Authors
Dates
2009-03-20—Published
2007-07-24—Filed