FIELD: process engineering.
SUBSTANCE: invention relates to production of alloys diamonds to be used in electronics and instrument making s well as jewellery stones. Alloyed diamond is produced by chemical deposition of gas phase on substrate in reaction chamber 2. Alloying solid-state component 7 is placed in alloying chamber 3. The latter has at least three connection flanges. Two of them are designed to connect alloying chamber 3 with working gas feed line 1 while third flange allows passage of pulsed laser radiation 8 via translucent window 5 into alloying chamber 3 for sputter of alloying component 7. Note here that alloying component concentration in diamond is adjusted by varying the laser parameters: laser diode pump current, laser pulse frequency and distance from laser radiation focus to alloying component surface. Working gas can be composed of the mix of hydrogen and methane at the ratio of 98:2% to 90:10%. Additionally, oxygen can be added thereto.
EFFECT: precise alloying in the wide range of concentrations (1014 atom/cm3 to 9×1019 atom/cm3) of boron, sulphur and silicon.
3 cl, 1 dwg, 4 tbl, 4 ex
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Authors
Dates
2015-01-10—Published
2013-01-22—Filed