FIELD: method, aimed at weakening interfering voltages which occur in data storage device which has passive matrix addressing.
SUBSTANCE: in accordance to the method, injection of electric potentials is performed in time-coordinated manner, which corresponds to impulse injection protocol. During execution of addressing operation a memory cell adjusts to first polarization state by receiving first active voltage impulse. Then, depending on the protocol used, second voltage impulse is injected, which may be second active voltage impulse with polarity which is opposite to polarity of first impulse. Given voltage impulse is used for switching the cell to second polarization state. Cells of device are configured in two or more electrically divided segments in such a way, that each segment corresponds to an individual space of physical addresses. During conduction of addressing operation data is directed into segment, which is selected on basis of information about previous and/or planned injections of active voltage impulses into segments.
EFFECT: increased efficiency.
36 cl, 35 dwg
