FIELD: electronics.
SUBSTANCE: in accordance to method for controlling ferro-electric or electret memorizing device during reading of data from memory cells of the device, first set of voltage differences is fed to first and second electrode sets. Second set of voltage differences is fed to first and second electrode sets during recording or renewal of data in memory cells. In both aforementioned cases first and second sets of voltage differences correspond to array of potential values set by protocol for feeding voltage impulses, which includes temporal sequences of voltage impulses. During that at least one parameter is determined, which characterizes change of response of memory cells, and this parameter is used to determine at least one correcting factor for voltage impulses. With usage of at least one correcting factor, correction of at least one parameter of impulses being fed is performed. Invention also discloses ferro-electric or electret memorizing device for realization of current method.
EFFECT: increased efficiency.
2 cl, 13 dwg
