FIELD: technology for use with memory with passive matrix addressing.
SUBSTANCE: memory is formed by a set of memory cells containing electrically polarized material having a property of residual polarization, preferably electret or ferroelectric material, while logical value being stored in memory cell is presented by actual state of polarization in current cell, level of polarization during each recording or reading cycle is limited by value determined by contour for controlling operations for reading and recording. Current value is within interval between level higher than zero and upper limit, which is selected to be less than level of polarization saturation and matching current criterion of reliability of determining of logical state of memory cell.
EFFECT: decreased wear, higher speed of operation, decreased requirements for driver contours.
2 cl, 5 dwg
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|
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