FIELD: memory control technology.
SUBSTANCE: method includes setting potential on selected controlling data buses in such a way, that it is close to or coincides with one of given n levels of potential. Control of potentials set on all control buses and data buses is performed according to the protocol in such a way, that control buses consecutively lock on potential values selected from nWORD values, while data buses are either consecutively locked on potential values selected from nBIT values, or connected for given period within limits of time sequence of impulses, given by protocol, to contour for detecting charges flowing between bus or buses of data and cells, connected by these buses.
EFFECT: minimized perturbation in non-selected memory cells for recording data in memory of device as well as for reading data from the memory.
16 cl, 15 dwg
