FIELD: carbon materials.
SUBSTANCE: monocrystalline diamond grown via chemical precipitation from gas phase induced by microwave plasma is subjected to annealing at pressures above 4.0 GPa and heating to temperature above 1500°C. Thus obtained diamonds exhibit hardness higher than 120 GPa and crack growth resistance 6-10 Mpa n1/2.
EFFECT: increased hardness of diamond product.
12 cl, 3 dwg, 5 ex
Title | Year | Author | Number |
---|---|---|---|
SUPERSTRONG SINGLE CRYSTALS OF CVD-DIAMOND AND THEIR THREE-DIMENSIONAL GROWTH | 2005 |
|
RU2389833C2 |
HARD DIAMONDS AND METHOD OF ITS PREPARATION | 2004 |
|
RU2325323C2 |
ANNEALING OF MONOCRYSTALLINE DIAMONDS OBTAINED BY CHEMICAL DEPOSITION FROM GASEOUS PHASE | 2004 |
|
RU2324764C2 |
METHOD OF OBTAINING FANCY LIGHT-BLUE OR FANCY LIGHT GREENISH BLUE MONOCRYSTALLINE CVD-DIAMOND AND OBTAINED PRODUCT | 2010 |
|
RU2540624C2 |
METHOD OF PROCESSING MONOCRYSTALLINE CVD-DIAMOND AND THE OBTAINED PRODUCT | 2010 |
|
RU2580916C1 |
COLOURLESS MONOCRYSTALLINE DIAMOND OBTAINED VIA HIGH-GROWTH RATE CHEMICAL GAS-PHASE DEPOSITION | 2006 |
|
RU2398922C2 |
METHOD FOR MAKING FANCIFULLY COLOURED ORANGE MONOCRYSTALLINE CVD-DIAMOND, AND FINISHED PRODUCT | 2010 |
|
RU2497981C2 |
METHOD OF PROCESSING MONOCRYSTALLINE CVD-DIAMOND AND OBTAINED PRODUCT | 2010 |
|
RU2540611C2 |
COLOURED DIAMONDS | 2003 |
|
RU2328563C2 |
METHOD FOR OBTAINING A MATERIAL OF HIGH THERMAL CONDUCTIVITY AND A HEAT SINK MADE OF A MATERIAL OBTAINED BY THIS METHOD | 2021 |
|
RU2757042C1 |
Authors
Dates
2008-04-27—Published
2004-07-14—Filed