ULTRAHARD DIAMONDS AND A METHOD FOR PREPARATION THEREOF Russian patent published in 2008 - IPC C30B25/00 C30B33/02 C30B29/04 

Abstract RU 2323281 C2

FIELD: carbon materials.

SUBSTANCE: monocrystalline diamond grown via chemical precipitation from gas phase induced by microwave plasma is subjected to annealing at pressures above 4.0 GPa and heating to temperature above 1500°C. Thus obtained diamonds exhibit hardness higher than 120 GPa and crack growth resistance 6-10 Mpa n1/2.

EFFECT: increased hardness of diamond product.

12 cl, 3 dwg, 5 ex

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RU 2 323 281 C2

Authors

Khemli Rassell Dzh.

Mao Kho-Kvang

Jan' Chzhi-Shiju

Dates

2008-04-27Published

2004-07-14Filed