FIELD: chemistry.
SUBSTANCE: process of hard monocrystalline diamond preparation compises fixing of inoculating diamond in the holder and its growing by the way of chemical deposition from gaseous phase induced by microwave plasma. The process is implemented at temperature ca 1000°C - 1100°C in medium N2/CH4=0.2-5.0 and CH4/H2=12-20% at total pressure 120-220 torr. Derived monocrystalline diamond has the hardness in the range 50-90GPa and fracture strength 11-20MPa m1/2.
EFFECT: increasing of diamond hardness.
7 cl, 4 dwg
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Authors
Dates
2008-05-27—Published
2004-07-14—Filed