FIELD: chemistry.
SUBSTANCE: method involves controlling temperature of a diamond growth surface so that all temperature gradients on the said surface do not exceed 20 єC, and growth of a monocrystalline diamond on the said surface through chemical gas-phase deposition in a microwave plasma at growth temperature in a deposition chamber, the atmosphere of which contains approximately 8-20% CH4 per unit H2 and approximately 5-25% O2 per unit CH4. Diamonds larger than 10 carat may be obtained using the method, which is the subject of the present invention.
EFFECT: faster diamond growth.
29 cl, 1 ex, 11 dwg
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