FIELD: semiconductor materials. SUBSTANCE: wide silicon plates with variable thickness are manufactured without crucible and melt-replenishment means by way of stretching rectangular pattern from molten apex of polycrystalline charge and replenishing melt by feeding charge from below upward into melting zone. As heater, loop-type high-frequency inductor is used disposed near the charge apex. EFFECT: enhanced efficiency and improved quality of product. 2 dwg
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