METHOD OF PHOTOLITHOGRAPHY Russian patent published in 2008 - IPC H01L21/308 

FIELD: electronic engineering.

SUBSTANCE: in photolithography method first the surface of single protective layer is coated with the first layer of photoresist, where the first hardened photoresist relief is formed, in such a way so that one part of this relief borders coincides with corresponding part of required profile borders that is subject to etching in protective layer. At that dimensions of the first relief are at least two times more than the dimensions of required profile. After that the second layer of photoresist is applied above the first relief, where the second hardened photoresist relief is created in such a way so that part of this second relief borders coincides with remaining part of required profile borders. At that second relief dimensions are at least two times more than dimensions of required profile. In that way the resulting hardened relief is received, the borders of which are precisely corresponding to the borders of required profile. After that etching of protective layer is carried out in single etchant of corresponding composition through the window in shaped photoresist mask, and the required profile is obtained.

EFFECT: reduces material and labour expenditures necessary for receiving relief elements with dimensions of not more than 1 micrometer.

3 dwg