METHOD OF PHOTOLITHOGRAPHY Russian patent published in 2010 - IPC H01L21/308 

FIELD: electricity.

SUBSTANCE: protective layer is used, in which required profile is arranged by means of etching with size of elements of not more than 1 micrometre. At first a single layer of photoresist is applied onto surface of this protective layer, where the first exposed section is formed so that one part of this exposed section borders matches according part of required profile borders subject to etching in protective layer. At the same time dimensions of the first exposed section are at least twice more than dimensions of required profile. Afterwards the second exposed section is created in a layer of photoresist, so that part of borders of this second exposed section matches remaining part of required profile borders. At the same time dimensions of the second exposed section are at least twice more than dimensions of required profile, and duration of exposure of each exposed section are determined according to given ratio. Afterwards one process of photoresist relief development is carried out, as well as one process of its curing, and required profile is produced by means of etching.

EFFECT: invention makes it possible to reduce material and labour inputs required to produce elements of relief with dimensions of not more than 1 micrometre.

4 dwg