METHOD OF MANUFACTURE OF SEMICONDUCTOR DEVICE WITH CONTROLLING ELECTRODE OF SUBMICRON LENGTH Russian patent published in 1995 - IPC

FIELD: microelectronics. SUBSTANCE: first masking layer is subjected to anode oxidizing over its whole thickness through window of photoresistive mask before application of second masking layer to obtain gap of submicron length between masking layers when manufacturing semiconductor device with the aid of optical lithography. Anode oxide is etched out and repeat anode oxidizing under mask of photoresist of butt of first masking layer is conducted to preset thickness. After application of second masking layer anode oxide of first masking layer is etched away. Aluminium is used as material of first masking layer. Repeat anodizing of masking layer is performed under mode of manufacture of dense oxide. EFFECT: facilitated manufacture, improved reliability of method. 2 cl, 20 dwg