METHOD FOR MANUFACTURING OF SEMICONDUCTOR INSTRUMENTS Russian patent published in 1999 - IPC

FIELD: semiconductor equipment, in particular, manufacturing Schottky-effect field-effect transistors with mushroom submicron gate. SUBSTANCE: method involves forming gate gap of 0.1-0, mcm in dielectric layer using contact photolithography by means of etching blind recess in layer with controlled side sub-etching for photo resistive mask. Then method involves deposition of additional metal layer, removal photo resistive layer, etching along metal mask in recess until semiconductor surface in channel appears. EFFECT: facilitated manufacturing, increased yield ratio, due to decreased number of dielectric layers on chip and removal of flaking and cracking effects on multilayer dielectric coating. 6 dwg