MICROWAVE LOAD OF HIGH POWER LEVEL Russian patent published in 2008 - IPC H01P1/26 

FIELD: electric engineering.

SUBSTANCE: invention may be used as terminal load in wave-conducting paths with high power level. Microwave load of high power level contains section (1) of wave conductor and dielectric base (2). Novelty lies in the fact that in one end of wave-conducting section (1) cut is arranged at that angle to its longitudinal axis, at the cut butt end dielectric base (2) and flange (3) are installed, being fixed in section (1) of wave conductor. In additional points of formula specific version of wave-conducting load parts is described.

EFFECT: increase of coordination, increase of electric strength and decrease of load dimensions.

2 dwg