INJECTION LASER Russian patent published in 2019 - IPC H01S5/10 

FIELD: manufacturing technology.

SUBSTANCE: invention can be used to create an injection laser. Essence of the invention lies in the fact that the injection laser includes a laser heterostructure grown on the substrate, having an active region enclosed between the first and second waveguide layers, to which on the outer side are respectively the p-type wide-band emitter layer and the n-type conductivity wide-band emitter layer, which are the limiting layers, a strip-by-ohmic contact adjoining the outer side of the wide-band p-type conductivity emitter, a solid ohmic contact adjoining the outer side of the substrate, injection region under strip-type ohmic contact, enclosed between passive regions, wherein in one of the passive regions there is a relief structure, the relief structure is made on the outer side of at least one passive region in the plane perpendicular to the layers of the heterostructure, at a distance from the nearest injection area boundary with the passive region of not less than 0.1 W, where W is width of injection area, mcm, value of amplitude of relief structure is not less than 10λ, where λ is the working wavelength of the injection laser in free space, mcm, and the ratio of amplitude of the relief structure to its period is equal to at least 2.

EFFECT: possibility of simplifying the manufacturing technology while maintaining increased output optical power both in continuous and pulse modes of current pumping.

6 cl, 1 tbl, 4 dwg