INJECTION LASER Russian patent published in 2015 - IPC H01S5/00 

FIELD: electricity.

SUBSTANCE: injection laser includes semiconductor heterostructure containing waveguide layer between top and bottom wide-band emitters of p- and n-type conductivity respectively, serving as limiting layers as well, with active zone consisting of at least one quantum-confined active layer, optical Fabry-Perot resonator and ohmic contact strip under which injection zone is positioned, so that top p-type emitter features mesa cavities in ohmic contact area with length equal to or less than ohmic contact width and positioned at equal distances with pitch defined by a given ratio. Cross-section of mesa cavities has wedge shape with one side perpendicular to optical Fabry-Perot resonator axis and the other side tilted outwards at 25-60 degrees angle to plane of the first side of mesa cavity.

EFFECT: possible generation of narrow emission band by injection laser.

3 dwg