IMPULSE INJECTION LASER Russian patent published in 2009 - IPC H01S5/32 

FIELD: electric engineering.

SUBSTANCE: invention relates to quantum electronics, namely, to semi-conductor lasers. The said laser contains hetero structure of divided limitation including multimode waveguide with limiting layers being implemented as p- and n-type conductivity emitters with similar refraction indices. The laser also includes active zone, reflectors, optical edges, ohmic contacts and optical resonator. The active zone forms volumetric layer of semi-conducting material. The width of band gap in this layer is less than the band gap width of waveguide. The thickness of volumetric active zone d_ar meets inequation , where - planks constant, m_h,e - electron hole mass, λ - length of generation wave in vacuum. E - kinetic energy of charge carriers, which is taken the least between calculated m_h and m_e.

EFFECT: increased peak laser radiation at reduced width of laser diode spectrum in impulse generation mode.

1 dwg