DIODE SWITCH WITH INCREASED MICROWAVE POWER Russian patent published in 2008 - IPC H01P1/15 

FIELD: electricity.

SUBSTANCE: invention can be used receive/transmit modules of phase-locked arrays (PLA) and other devices for receive/transmit channels switching. In diode switch with increased UHF-power having at input and two outputs characteristic impedance Z₀ and implemented in segments between points of input and outputs connection within transmission line lengths with characteristic impedance and with one of the lengths equal to half of average wavelength of passing signal operating band, and also containing in its circuit following diodes: first diode connected by its anode in series with the first output in segment between input and first output, and second diode connected by its anode to transmission line in parallel with the second output in segment between input and the second output. The switch is built on three diodes and two transmission line lengths connected in parallel and directly linking switch input with its second output. At that, the diode connected by its anode in series with the first output is connected by its cathode directly to switch input, and other two diodes are connected in parallel with second output by their anodes to midpoints of both mentioned lengths equal to half of average wavelength of passing signal operating band.

EFFECT: improvement of switch reliability; decrease of its longitudinal dimension and raise of switch multifunctionality together with improved matching between its input and outputs and reduced losses in its circuit.

1 dwg