HIGH-SENSITIVE (SINGLE-PHOTON) INTEGRATED AVALANCHE PHOTODETECTOR Russian patent published in 2008 - IPC H01L31/06 

FIELD: physics.

SUBSTANCE: invention concerns computer vision facilities and can be used in high-sensitivity video and photo cameras, in particular for three-dimensional image registration. Photodetector contains avalanche photodiode provided on silicon substrate of first conductivity type including the first near-surface region of second conductivity type connected to the first contact of photodiode, under-located regions of photocurrent generation and multiplication and related photocurrent area surrounded by stopper area, near-surface region of first conductivity type, connected to the second contact of photodiode, integrated reading circuit provided on the same substrate and connected to the second contact of photodiode through common electrode, and to the first contact of photodiode through its input. Stopper area is made as pockets region of second conductivity type representing a segment of integrated reading circuit. Regions of photocurrent generation and multiplication are made within substrate area separated by embedded area of first conductivity type. Input of integrated reading circuit is connected to the first electrode of photodiode through blocking capacitor formed by two electrodes of two layers of metal interconnections of integrated blocking capacitor intermediate insulator, and, through additional circuit of signal formation including two MOS transistors, to channels of first conductivity type. The first transistor is connected by sink to input of reading circuit, by gate and source to the first electrode of power supply of the integrated reading circuit. The second transistor is connected by sink to input of reading circuit, by gate to the second electrode of power supply, and by source to blocking capacitor through resistor.

EFFECT: improved homogeneity of parameters of avalanche photodiodes in multielement IC of photodetector and increased reliability.

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