FIELD: microelectronics. SUBSTANCE: photodetector includes receiver, first, second and third MIS transistors, reservoir capacitor. Source of first MIS transistor is connected to receiver and its drain - to source of second MIS transistor. One plate of reservoir capacitor is linked to zero potential wire, the other plate - to drain of second MIS transistor and source of third MIS transistor. Output signal is picked off of drain of third MIS transistor. Besides them photodetector is inserted with fourth MIS transistor, additional capacitor, reference current source, fifth MIS transistor having conductance of type opposite to that of the rest of MIS transistors. Fourth and second MIS transistors have common sources and are located close to each other on semiconductor substrate to form pair of transistors matched by threshold voltages. Drain of fourth MIS transistor is connected to first plate of additional capacitor, source, gate and drain of fifth complementary MIS transistor are linked correspondingly to voltage source, drain of fourth MIS transistor and source of second MIS transistor. Second plate of additional capacitor is coupled to source of fifth MIS transistor and reference current source is placed in parallel to additional capacitor. EFFECT: simplified design, reduced power dissipated in photodetector. 4 dwg
